On possible new methods for δ-layer synthesis of the diamond transistor

An upper estimate of the activation barrier Ea, overcome by boron atom during its adsorption on singular face unalloyed diamond, has been obtained using quantum chemistry methods. This process is connected with formation boron-doped δ-layer in which an integral part diamond transistor. The Ea was found to be approximately 6–7 eV. It correspondent order magnitude floating electrode potential drop relative stationary low-temperature plasma at electronic temperature above ~ 1 Meanwhile, existing high-frequency plasma-enhanced CVD (MWCVD) technology used create δ-layers, source growth high-energy ions energies hundreds eV (and even units keV) enter substrate from MW plasma. energy that acquire near-electrode voltage clearly excessive and leads both excessively high depth ion penetration into large dispersion this depth. reduces quality transistor efficiency as a whole. At same time, specificity plasma, created MW-resonator for growth, allows modes (units small eV) drops. paper considers possibility switching between these two modes. high-drop mode realizes rapid low-drop – δ-layer.